| PART |
Description |
Maker |
| LSIC2SD120C05 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
| IDH03SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
3 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-220
|
Infineon Technologies AG
|
| IDD08SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
8 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-252
|
Infineon Technologies AG
|
| LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
| STPSC1006 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| C3D10170H |
Silicon Carbide Schottky Diode 1700-Volt Schottky Rectifier
|
Cree, Inc
|
| SDP10S30 SDB10S30SMD SDT10S30 |
Silicon Carbide Schottky Diodes - 10A diode in TO220-3 package
Silicon Carbide Schottky Diodes - 10A diode in TO263 package
Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon
|
| C4D08120E |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
| CSD02060A CSD02060 CSD02060G |
Silicon Carbide Schottky Diode
|
List of Unclassifed Manufacturers
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